advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 20v capable of 2.5v gate drive r ds(on) 14m low drive current i d 45a surface mount package description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg o c t j o c symbol value unit rthj-c maximum thermal resistance, junction-case 4.0 o c/w rthj-a 62.5 o c/w rthj-a maximum thermal resistance, junction-ambient 110 o c/w data and specifications subject to change without notice maximum thermal resistance, junction-ambient (pcb mount) 3 rohs-compliant product 200901122 1 AP9918GH/j parameter rating drain-source voltage 20 gate-source voltage + 12 continuous drain current, v gs @ 4.5v 45 continuous drain current, v gs @ 4.5v 20 pulsed drain current 1 140 total power dissipation 31.25 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.25 thermal data parameter storage temperature range a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. g d s to-251(j) g d s to-252(h) g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.1 - v/ : r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =18a - - 14 m ? ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =18a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =18a, v gs =0 v , - 19 - ns q rr reverse recovery charge di/dt=100a/s - 11 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board 2 AP9918GH/j
AP9918GH/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 120 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 4.5v 4.0v 3.5v 3.0v v g =2.5v 0 20 40 60 80 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 4.5v 4.0v 3.5v 3.0v v g =2.5v 10 12 14 16 18 20 22 24 26 12345 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =18a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =4.5v i d =18a 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i f (a) t j =25 o c t j =150 o c 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 junction temperature ( o c ) v gs(th) (v)
AP9918GH/j fig7. gate charge characteristics fig 8. typical capacitance characteristics fig9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =18a v ds =10v v ds =12v v ds =16v t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 laser marking symbols advanced power electronics corp. e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 9918gh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence logo meet rohs requirement for low voltage mosfet only e3 5
package outline : to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.40 0.60 0.80 b2 0.60 0.85 1.05 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 4.80 5.20 5.50 e 6.70 7.00 7.30 e1 5.40 5.60 5.80 e2 1.30 1.50 1.70 e ---- 2.30 ---- f 7.00 8.30 9.60 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-251 symbols advanced power electronics corp. millimeters 9918gj ywwsss part numbe r package code a c1 a1 c e d e2 e1 e b1 b2 f d1 e date code (ywwsss) y last digit of the year ww week sss sequence logo meet rohs requirement for low voltage mosfet only
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